? semiconductor components industries, llc, 2014 june, 2014 ? rev. 0 1 publication order number: mmbz16val/d mmbz16v, szmmbz16v 40 watt peak power zener transient voltage suppressors sot?23 dual common anode zeners for esd protection these dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. they are intended for use in voltage and esd sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. their dual junction common anode design protects two separate lines using only one package. these devices are ideal for situations wh ere board space is at a premium. features ? sot?23 package allows either two separate unidirectional configurations or a single bidirectional configuration ? standard zener breakdown voltage range ? 15.2 v to 16.80 v ? peak power ? 40 w @ 1.0 ms (unidirectional), per figure 5 waveform ? esd rating: ? class 3b (> 16 kv) per the human body model ? class c (> 400 v) per the machine model ? esd rating of iec61000?4?2 level 4, 30 kv contact discharge ? maximum clamping voltage @ peak pulse current ? low leakage < 5.0 a ? flammability rating ul 94 v?0 ? sz prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable ? this is a pb?free device mechanical characteristics case: void-free, transfer-molded, thermosetting plastic case finish: corrosion resistant finish, easily solderable maximum case temperature for soldering purposes: 260 c for 10 seconds package designed for optimal automated board assembly small package size for high density applications available in 8 mm tape and reel use the device number to order the 7 inch/3,000 unit reel. replace the ?t1? with ?t3? in the device number to order the 13 inch/10,000 unit reel. sot?23 case 318 style 12 cathode 1 3 anode cathode 2 marking diagram see specific marking information in the device marking column of the table on page 2 of this data sheet. device marking information http://onsemi.com see detailed ordering and shipping information on page 2 o f this data sheet. ordering information 1 xxxm xxx = specific device code m = date code = pb?free package (note: microdot may be in either location)
mmbz16v, szmmbz16v http://onsemi.com 2 maximum ratings rating symbol value unit peak power dissipation @ 1.0 ms (note 1) p pk 40 w total power dissipation on fr?5 board (note 2) @ t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance junction?to?ambient r ja 556 c/w total power dissipation on alumina substrate (note 3) @ t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance junction?to?ambient r ja 417 c/w junction and storage temperature range t j , t stg ? 55 to +150 c lead solder temperature ? maximum (10 second duration) t l 260 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device function ality should not be assumed, damage may occur and reliability may be affected. 1. non?repetitive current pulse per figure 5 and derate above t a = 25 c per figure 6. 2. fr?5 = 1.0 x 0.75 x 0.62 in. 3. alumina = 0.4 x 0.3 x 0.024 in, 99.5% alumina. *other voltages may be available upon request. ordering information device marking package shipping ? mmbz16valt1g 16a sot?23 (pb?free) 3,000 / tape & reel SZMMBZ16VALT1G* 16a mmbz16vtalt1g 16t szmmbz16vtalt1g* 16t ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. *sz prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable.
mmbz16v, szmmbz16v http://onsemi.com 3 electrical characteristics (t a = 25 c unless otherwise noted) unidirectional (circuit tied to pins 1 and 3 or 2 and 3) symbol parameter i pp maximum reverse peak pulse current v c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm v br breakdown voltage @ i t i t test current v br maximum temperature coefficient of v br i f forward current v f forward voltage @ i f z zt maximum zener impedance @ i zt i zk reverse current z zk maximum zener impedance @ i zk uni?directional tvs i pp i f v i i r i t v rwm v c v br v f electrical characteristics (t a = 25 c unless otherwise noted) unidirectional (circuit tied to pins 1 and 3 or pins 2 and 3) (v f = 0.9 v max @ i f = 10 ma) (5% tolerance) 40 watts device* device marking v rwm i r @ v rwm breakdown voltage v c @ i pp (note 5) v br v br (note 4) (v) @ i t v c i pp volts na min nom max ma v a mv/ c mmbz16valt1g 16a 13 50 15.20 16 16.80 1.0 23 1.7 13.8 (v f = 0.9 v max @ i f = 10 ma) (2% tolerance) 40 watts device* device marking v rwm i r @ v rwm breakdown voltage v c @ i pp (note 5) v br v br (note 4) (v) @ i t v c i pp volts na min nom max ma v a mv/ c mmbz16vtalt1g 16t 13 50 15.68 16 16.32 1.0 23 1.7 13.8 product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 4. v br measured at pulse test current i t at an ambient temperature of 25 c. 5. surge current waveform per figure 5 and derate per figure 6 * include sz-prefix devices where applicable.
mmbz16v, szmmbz16v http://onsemi.com 4 typical characteristics ?40 +50 18 figure 1. typical breakdown voltage versus temperature (upper curve is for bidirectional mode, lower curve is for unidirectional mode) 0 temperature ( c) + 100 + 150 15 12 9 6 3 0 ?40 +25 1000 figure 2. typical leakage current versus temperature temperature ( c) +85 +12 5 100 10 1 0.1 0.01 breakdown voltage (volts) (v br @ i t ) i r (na) figure 3. typical capacitance versus bias voltage (upper curve is for unidirectional mode, lower curve is for bidirectional mode) 0 25 50 75 100 125 150 17 5 300 250 200 150 100 50 0 temperature ( c) fr?5 board alumina substrate 01 2 3 90 70 60 40 30 10 0 c, capacitance (pf) bias (v) 50 20 p d , power dissipation (mw) figure 4. steady state power derating curve 21 80
mmbz16v, szmmbz16v http://onsemi.com 5 typical characteristics 0.1 1 10 100 1000 1 10 100 power is defined as v rsm x i z (pk) where v rsm is the clamping voltage at i z (pk). pw, pulse width (ms) unidirectional rectangular waveform, t a = 25 c bidirectional figure 5. pulse waveform value (%) 100 50 0 01 2 34 t, time (ms) figure 6. pulse derating curve pulse width (t p ) is defined as that point where the peak current decays to 50% of i pp . half value ? i pp 2 t p t r 10 s peak value ? i pp 100 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 20 0 t a , ambient temperature ( c) figure 7. maximum non?repetitive surge power, p pk versus pw figure 8. maximum non?repetitive surge power, p pk (nom) versus pw 0.1 1 10 100 100 0 1 10 100 pw, pulse width (ms) unidirectional rectangular waveform, t a = 25 c bidirectional power is defined as v z (nom) x i z (pk) where v z (nom) is the nominal zener voltage measured at the low test current used for voltage classification. peak pulse derating in % of peak power or current @ t a = 25 c p pk , peak surge power (w) p pk , peak surge power (w)
mmbz16v, szmmbz16v http://onsemi.com 6 typical common anode applications a dual junction common anode design in a sot?23 package protects two separate lines using only one package. this adds flexibility and creativity to pcb design especially when board space is at a premium. two simplified examples of tvs applications are illustrated below. keyboard terminal printer etc. functional decoder i/o a SZMMBZ16VALT1G thru szmmbz16vtalt1g gnd computer interface protection b c d microprocessor protection i/o ram rom clock cpu control bus address bus data bus gnd v gg v dd SZMMBZ16VALT1G thru szmmbz16vtalt1g SZMMBZ16VALT1G thru szmmbz16vtalt1g
mmbz16v, szmmbz16v http://onsemi.com 7 package dimensions sot?23 (to?236) case 318?08 issue ap mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 soldering footprint style 12: pin 1. cathode 2. cathode 3. anode *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. d a1 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.10 0.20 0.30 0.004 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.008 0.012 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.029 c 0 ??? 10 0 ??? 10 on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other inte llectual property. a listing of scillc?s pr oduct/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typical s? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 mmbz16val/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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